FDD6680S Fairchild Semiconductor, FDD6680S Datasheet - Page 4

• Manufacturer Part Number: FDD6680S
• Description: MOSFET Power 30V N-Ch PowerTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDD6680S

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252AA
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Typical Characteristics
50
40
30
20
10
60
50
40
30
20
10
0
0
Figure 3. On-Resistance Variation with
1
2.6
2.2
1.8
1.4
0.6
0.2
0
Figure 1. On-Region Characteristics.
V
1
-50
GS
Figure 5. Transfer Characteristics.
7.0V
V
= 10V
DS
V
I
D
= 5V
GS
= 12.5A
-25
= 10V
V
5.0V
2
GS
V
T
, GATE TO SOURCE VOLTAGE (V)
DS
0
J
, JUNCTION TEMPERATURE (
Temperature.
4.5V
, DRAIN-SOURCE VOLTAGE (V)
1
25
4.0V
3
3.5V
50
100
3.0V
o
C
75
2
100
o
4
C)
T
25
A
o
= -55
C
125
o
C
150
5
3
Figure 6. Body Diode Forward Voltage Variation
0.04
0.03
0.02
0.01
0.001
0.01
0
0.1
1.8
1.6
1.4
1.2
0.8
10
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
2
1
2
1
0
0
V
Drain Current and Gate Voltage.
GS
T
V
A
= 0V
GS
= 100
Gate-to-Source Voltage.
4.5V
= 4.0V
V
o
SD
10
V
C
25
, BODY DIODE FORWARD VOLTAGE (V)
4
GS
5.0V
0.2
o
, GATE TO SOURCE VOLTAGE (V)
C
-55
I
6.0V
D
o
, DRAIN CURRENT (A)
C
20
T
7.0V
A
6
0.4
= 100
8.0V
T
A
o
= 25
C
30
o
C
10V
0.6
8
FDD6680S Rev D (W)
40
I
D
= 6.3A
0.8
50
10