TIM5964-80SL Toshiba Semiconductor, TIM5964-80SL Datasheet

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TIM5964-80SL

Manufacturer Part Number
TIM5964-80SL
Description
MICROWAVE POWER GaAs FET
Manufacturer
Toshiba Semiconductor
Datasheet

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Part Number:
TIM5964-80SL
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TDK
Quantity:
920
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
Recommended Gate Resistance(Rg) : 28 Ω (Max.)
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
FEATURES
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
HIGH POWER
LOW INTERMODULATION DISTORTION
IM3=-30 dBc at Pout= 42.0dBm
Single Carrier Level
P1dB=49.0dBm at 5.9GHz to 6.4GHz
CHARACTERISTICS
CHARACTERISTICS
SYMBOL
SYMBOL
R
V
V
G
P
ΔTch
I
I
I
η
th(c-c)
IM
GSoff
DSS
DS1
DS2
ΔG
gm
GSO
1dB
1dB
add
3
V
I
V
I
V
V
I
Channel to Case
(VDS X IDS +Pin-P1dB)
(Single Carrier Level)
DS
DS
GS
DS
DS
DS
GS
f = 5.9 to 6.4GHz
Two-Tone Test
CONDITIONS
IDSset≅10.0A
CONDITIONS
= 12.0A
= 200mA
= -1.0mA
Po=42.0dBm
= 3V
=
=
= 0V
VDS= 10V
X Rth(c-c)
3V
3V
HIGH GAIN
G1dB=7.0dB at 5.9GHz to 6.4GHz
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM5964-80SL
UNIT
UNIT
° C/W
dBm
dBc
dB
dB
° C
%
A
A
S
V
A
V
MIN.
MIN.
48.0
-1.0
6.0
-25
-5
www.DataSheet4U.com
Rev. Dec. 2008
TYP. MAX.
49.0
18.0
TYP. MAX.
-30
7.0
-1.8
35
0.5
20
38
20.0
±0.8
16.0
100
-3.0
0.6

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TIM5964-80SL Summary of contents

Page 1

... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM5964-80SL HIGH GAIN G1dB=7.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERNALLY MATCHED FET ...

Page 2

... Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (7-AA02C) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM5964-80SL SYMBOL UNIT ...

Page 3

... RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=10V ≅18. Pin=42.0dBm 5.8 Output Power(Pout) vs. Input Power(Pin) 52 freq.=6.4GHz 51 V =10V DS I set≅10. TIM5964-80SL 5.9 6.0 6.1 6.2 6.3 Frequency(GHz) Pout ηadd 40 42 Pin(dBm) 3 www.DataSheet4U.com 6.4 6 ...

Page 4

... Power Dissipation(PT) vs. Case Temperature(Tc) 250 200 100 IM3 vs. Power Characteristics 0 V =10V DS I set≅10.0A DS freq.=6.4GHz -10 Δf=5MHz -20 -30 -40 - Pout(dBm) @Single carrier level TIM5964-80SL 80 120 160 Tc( ° www.DataSheet4U.com 200 48 ...

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