MC9S08AW32CFGE Freescale, MC9S08AW32CFGE Datasheet - Page 306

• Manufacturer Part Number: MC9S08AW32CFGE
• Manufacturer: Freescale

Specifications of MC9S08AW32CFGE

• Cpu Family: HCS08
• Device Core Size: 8b
• Frequency (max): 40MHz
• Interface Type: I2C/SCI/SPI
• Total Internal Ram Size: 2KB
• # I/os (max): 34
• Number Of Timers - General Purpose: 8
• Operating Supply Voltage (typ): 3.3/5V
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 2.7V
• On-chip Adc: 8-chx10-bit
• Instruction Set Architecture: CISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 44
• Package Type: LQFP
• Program Memory Type: Flash
• Program Memory Size: 32KB
• Lead Free Status / RoHS Status: Compliant

Appendix A Electrical Characteristics and Timing Specifications
A.12
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see
306
1
2
3
4
5
Num
Typical values are based on characterization data at V
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional information
on how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical
Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines
typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
10
1
2
3
4
6
8
5
7
9
FLASH Specifications
C
P
P
P
P
C
P
C
C
P
P
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
T
T = 25°C
L
to T
H
= –40°C to + 125°C
Characteristic
5
3
3
Table A-16. FLASH Characteristics
2
MC9S08AW60 Data Sheet, Rev 2
4
3
3
DD
V
= 5.0 V, 25°C unless otherwise stated.
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
Burst
Page
Mass
D_ret
Fcyc
prog
Read
10,000
Min
150
2.7
2.7
Chapter 4,
15
—
5
20,000
4000
100,000
Typ
9
4
100
—
“Memory.”
1
Freescale Semiconductor
Max
6.67
200
5.5
5.5
—
—
—
cycles
DD
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
supply.