M29W128GH70ZA6E NUMONYX, M29W128GH70ZA6E Datasheet - Page 89

• Manufacturer Part Number: M29W128GH70ZA6E
• Description: Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 70ns 64-Pin TBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W128GH70ZA6E

• Package: 64TBGA
• Cell Type: NOR
• Density: 128 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 128
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

M29W128GH, M29W128GL
Extended memory block
C.2
Customer lockable extended memory block
A device where the extended memory block is customer lockable is delivered with the DQ7
bit set to ‘0’ and the extended memory block unprotected. It is up to the customer to
program and protect the extended memory block but care must be taken because the
protection of the extended memory block is not reversible.
If the device has not been shipped with the extended memory block factory protected, the
block can be protected by setting the extended memory block protection bit, DQ0, to ‘0’.
However, this bit is one-time programmable and once protected the extended memory block
cannot be unprotected.
Once the extended memory block is programmed, the Exit Extended Memory Block
command must be issued to exit the extended memory block mode and return the device to
read mode.
Table 42.
Extended memory block address and data
(1)
Address
Data
x8
x16
Factory locked
Customer lockable
000000h-0000FFh
000000h-00007Fh
Security identification number Determined by customer
1. See
Table 35: Block
addresses.
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