M29W128GH70ZA6E NUMONYX, M29W128GH70ZA6E Datasheet - Page 55

• Manufacturer Part Number: M29W128GH70ZA6E
• Description: Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 70ns 64-Pin TBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W128GH70ZA6E

• Package: 64TBGA
• Cell Type: NOR
• Density: 128 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 128
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Table 20.
1. Unspecified data bits should be ignored.
2.
Program
Program during erase suspend
Buffered program abort
Program error
Chip erase
Block erase before timeout
Block erase
Erase suspend
Erase error
DQ7
loaded.
for write to buffer program and enhanced buffered program is related to the last address location
(2)
Operation
Status register bits
(2)
Erasing block
Erasing block
Erasing block
Any address
Any address
Any address
Any address
Any address
Non-erasing
Non-erasing
Non-erasing
Faulty block
Good block
(1)
Address
address
address
block
block
block
DQ7
DQ7
DQ7
DQ7
DQ7
0
0
0
0
0
1
0
0
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Data read as normal
DQ6
No
DQ5 DQ3
0
0
0
1
0
0
0
0
0
0
1
1
–
–
–
–
1
0
0
1
1
–
1
1
Toggle
Toggle
Toggle
Toggle
Toggle
toggle
toggle
toggle
DQ2
No
No
No
–
–
–
–
DQ1
0
–
1
–
–
–
–
–
–
–
–
–
–
55/94
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
RB
0
0
0
0
0
0
0
0