M29W128GH70ZA6E NUMONYX, M29W128GH70ZA6E Datasheet - Page 85

• Manufacturer Part Number: M29W128GH70ZA6E
• Description: Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 70ns 64-Pin TBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W128GH70ZA6E

• Package: 64TBGA
• Cell Type: NOR
• Density: 128 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 128
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Table 39.
2Ch
2Dh
3Ch
2Ah
2Bh
2Eh
2Fh
3Ah
3Bh
x16
27h
28h
29h
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
Address
4Eh
5Ah
5Ch
5Eh
6Ah
6Ch
6Eh
50h
52h
54h
56h
58h
60h
62h
64h
66h
68h
70h
72h
74h
76h
78h
x8
Device geometry definition
0018h
0002h
0000h
0006h
0000h
0001h
007Fh
0000h
0000h
0002h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
Data
Device size = 2
Flash device interface code description
Maximum number of bytes in multiple-byte program or page= 2
Number of Erase block regions. It specifies the number of regions
containing contiguous Erase blocks of the same size.
Erase block region 1 information
Number of Erase blocks of identical size = 007Fh +1
Erase block region 1 information
Block size in region 1 = 0200h * 256 byte
Erase block region 2 information
Erase block region 3 information
Erase block region 4 information
n
in number of bytes
Description
n
128 Kbytes
16 Mbytes
x8, x16
async.
Value
128
64
1
0
0
0
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