M29W128GH70ZA6E NUMONYX, M29W128GH70ZA6E Datasheet - Page 72

• Manufacturer Part Number: M29W128GH70ZA6E
• Description: Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 70ns 64-Pin TBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W128GH70ZA6E

• Package: 64TBGA
• Cell Type: NOR
• Density: 128 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 128
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Figure 22. Reset AC waveforms (no program/erase ongoing)
Figure 23. Reset during program/erase operation AC waveforms
Table 29.
1. Only available upon customer request.
2. Sampled only, not 100% tested.
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t
t
RHEL,
PHEL,
Symbol
t
t
t
PHWL
RHWL
PLYH
t
PLPX
t
t
RHGL,
PHGL,
RB
E, G, W
RP
RB
E, G,
RP
(2)
(2)
(2)
W
Reset AC characteristics
t
READ
t
Alt.
t
t
RPD
t
RH
RP
RB
Y
RP Low to read mode, during program or erase
RP pulse width
RP High to Write Enable Low, Chip Enable Low,
Output Enable Low
RP Low to standby mode, during read mode
RP Low to standby mode, during program or erase Min
RB High to Write Enable Low, Chip Enable Low,
Output Enable Low
tPLPX
tPLPX
tPHEL,
tPHWL
tPHGL
tRHEL, tRHGL, tRHWL
tPLYH
Parameter
Max
Min
Min
Min
Min
60
(1)
50
10
50
10
50
0
ns
M29W128GH,
M29W128GL
70 ns
50
10
50
10
50
0
AI11301c
80 ns
50
10
50
10
50
0
AI11300c
Unit
µs
µs
ns
µs
µs
ns