M29W128GH70ZA6E NUMONYX, M29W128GH70ZA6E Datasheet - Page 60

• Manufacturer Part Number: M29W128GH70ZA6E
• Description: Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 70ns 64-Pin TBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W128GH70ZA6E

• Package: 64TBGA
• Cell Type: NOR
• Density: 128 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 128
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Figure 11. AC measurement I/O waveform
Table 23.
1. Only available upon customer request.
2. V
Figure 12. Power-up waiting timings
60/94
CC
t
Symbol
t
VCQHWL
t
VCQHEL
t
VCHWL
VCHEL
and V
V
V
E
W
CC
CCQ
CCQ
Power-up waiting timings
ramps must be synchronized during power-up.
V
V
V
V
CC
CCQ
CC
CCQ
(2)
High to Write Enable Low
(2)
High to Write Enable Low
High to Chip Enable Low
High to Chip Enable Low
V CCQ
0 V
t
VCHEL
Parameter
t
VCQHEL
t
VCHWL
t
VCQHWL
Min
Min
Min
Min
AI05557b
V CCQ /2
M29W128GH, M29W128GL
70 or 60
(1)
500
500
55
55
ns
AI14247
80 ns
Unit
µs
µs
µs
µs