M29W128GH70ZA6E NUMONYX, M29W128GH70ZA6E Datasheet - Page 33

• Manufacturer Part Number: M29W128GH70ZA6E
• Description: Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 70ns 64-Pin TBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W128GH70ZA6E

• Package: 64TBGA
• Cell Type: NOR
• Density: 128 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 128
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Table 11.
1. The device doesn’t tolerate FFh as a valid command, and once FFh is issued to the device, the M29W128G will enter
2. X don’t care, PA program address, PD program data, BAd any address in the block. All values in the table are in
3. These cells represent read cycles. The other cells are write cycles.
4. The auto select addresses and data are given in
5. In unlock bypass, the first two unlock cycles are no more needed (see
Read/Reset
Auto
Select
Program
Chip Erase
Block Erase
Erase/Program Suspend
Erase/Program Resume
Read CFI Query
unexpected state. Adding a F0h command systematically after FFh command is necessary.
hexadecimal.
method (16-bit
that is ‘don’t care’.
bit and 16-bit mode).
Command
Manufacturer code
Device code
Extended memory
block protection
indicator
Block protection
status
(5)
Standard commands, 16-bit mode
mode), and
(1)
Table 9: Block protection - auto select mode - programmer method (16-bit
6+
1
3
3
4
6
1
1
1
Add
555
555
555
555
555
55
X
X
X
1st
Data Add Data
AA
AA
AA
AA
AA
B0
F0
30
98
Table 7: Read electronic signature - auto select mode - programmer
2AA
2AA
2AA
2AA
2AA
2nd
55
55
55
55
55
Add
555
555
555
555
Table 12
Bus operations
X
3rd
Data Add Data Add Data Add Data
F0
A0
90
80
80
and
(3)(4)
Table 13
555
555
PA
4th
(2)
(3)(4)
PD
AA
AA
Fast Program commands, 8-
2AA
2AA
mode), except for A9
5th
55
55
BAd
555
6th
33/94
10
30