M29W128GH70ZA6E NUMONYX, M29W128GH70ZA6E Datasheet - Page 44
M29W128GH70ZA6E
Manufacturer Part Number
M29W128GH70ZA6E
Description
Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 70ns 64-Pin TBGA Tray
Manufacturer
NUMONYX
Datasheet
1.M29W128GH70N6E.pdf
(94 pages)
Specifications of M29W128GH70ZA6E
Package
64TBGA
Cell Type
NOR
Density
128 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3|3.3 V
Sector Size
128KByte x 128
Timing Type
Asynchronous
Operating Temperature
-40 to 85 °C
Interface Type
Parallel
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29W128GH70ZA6E
Manufacturer:
ST
Quantity:
20 000
44/94
Figure 6.
NVPB program/erase algorithm
NO
Read Byte twice
Read Byte twice
Program NVPB
command set.
Enter NVPB
Addr = BAd
Addr = BAd
Addr = BAd
Toggle
DQ5=1
Toggle
DQ6=
Reset
DQ6=
Fail
YES
YES
NO
command set
NO
Exit NVPB
NO
Read Byte twice
Wait 500 μs
Addr = BAd
'0'(Program)
'1'(Erase)
DQ0=
Pass
YES
AI14242