M29W128GH70ZA6E NUMONYX, M29W128GH70ZA6E Datasheet - Page 52

• Manufacturer Part Number: M29W128GH70ZA6E
• Description: Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 70ns 64-Pin TBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W128GH70ZA6E

• Package: 64TBGA
• Cell Type: NOR
• Density: 128 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 128
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Figure 7.
1. PD is the programmed data (see
2. The lock register can only be programmed once.
52/94
Device returned
to Read mode
Lock register program flowchart
Write Lock Register Exit command:
Add Dont' care, Data 90h
Add Dont' care, Data 00h
Table 18: Lock register
PASS:
Enter Lock Register command set:
Program Lock Register Data:
Add Dont' care (1) , Data PDh
YES
Add Dont' care, Data A0h
Write Unlock cycles:
Add 555h, Data AAh
Add 2AAh, Data 55h
Add 555h, Data 40h
Polling algorithm
bits).
DQ5 = 1
START
Write
Done
NO
YES
NO
the device to Read mode
Unlock cycle 1
unlock cycle 2
Reset
FAIL
to return
ai13677