M29W128GH70ZA6E NUMONYX, M29W128GH70ZA6E Datasheet - Page 19

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M29W128GH70ZA6E

Manufacturer Part Number
M29W128GH70ZA6E
Description
Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 70ns 64-Pin TBGA Tray
Manufacturer
NUMONYX
Datasheet

Specifications of M29W128GH70ZA6E

Package
64TBGA
Cell Type
NOR
Density
128 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3|3.3 V
Sector Size
128KByte x 128
Timing Type
Asynchronous
Operating Temperature
-40 to 85 °C
Interface Type
Parallel

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3.7.2
3.7.3
3.7.4
programmer method (8-bit mode)
- programmer method (16-bit
These codes can also be accessed by issuing an Auto Select command (see
Auto Select
Verify extended memory block protection indicator
The extended memory block is either factory locked or customer lockable.
The protection status of the extended memory block (factory locked or customer lockable)
can be accessed by reading the extended memory block protection indicator. It can be read
in auto select mode using either the programmer (see
method (see
The protection status of the extended memory block is then output on bit DQ7 of the data
input/outputs (see
Verify block protection status
The protection status of a block can be directly accessed by performing a read operation
with control signals and addresses set as shown in
If the block is protected, then 01h (in x 8 mode) is output on data input/outputs DQ0-DQ7,
otherwise 00h is output.
Hardware block protect
The V
the highest (M29W128GH) or lowest block (M29W128GL) is protected and remains
protected regardless of the block protection status or the reset pin state.
PP
/WP pin can be used to protect the highest or lowest block. When V
command).
Table 10
Table 4
and
and
Table
mode).
Table
11).
and
5, Bus operations in 8-bit and 16-bit mode).
Table 7: Read electronic signature - auto select mode
Table 8
Table 8
and
and
Table
Table
9.
9) or the in-system
PP
Section 6.1.2:
/WP is at V
19/94
IL

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