BG 5412K E6327 Infineon Technologies, BG 5412K E6327 Datasheet - Page 9

• Manufacturer Part Number: BG 5412K E6327
• Description: MOSFET N-CH DUAL 8V 25MA SOT-363
• Manufacturer: Infineon Technologies

Specifications of BG 5412K E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.1dB
• Current - Test: 10mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000468150

AGC characteristic AGC = ƒ(V
f= 45 MHz, amp. A
AGC characteristic AGC = ƒ(V
f= 800MHz, amp. A
dB
dB
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
0
0
0
0
0.5
0.5
1
1
1.5
1.5
2
2
2.5
2.5
G2S
G2S
3
3
)
)
V
V
V
V
G2S
G2S
4
4
9
AGC characteristic AGC = ƒ(V
f= 45 MHz, amp. B
AGC characteristic AGC = ƒ(V
f= 800 MHz, amp. B
dB
dB
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
0
0
0
0
0.5
0.5
1
1
120k
120k
1.5
1.5
82k
82k
2
2
2.5
2.5
BG5412K
2009-10-01
G2S
G2S
3
3
)
)
V
V
V
V
G2S
G2S
4
4