BG 5412K E6327 Infineon Technologies, BG 5412K E6327 Datasheet - Page 10

• Manufacturer Part Number: BG 5412K E6327
• Description: MOSFET N-CH DUAL 8V 25MA SOT-363
• Manufacturer: Infineon Technologies

Specifications of BG 5412K E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.1dB
• Current - Test: 10mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000468150

Crossmodulation V
V
amp.A
DS
dBµV
115
105
100
= 5 V, R
95
90
85
0
5
g1
10
= 120 kΩ
15
20
unw
25
= (AGC)
30
35
40 dB
AGC
50
10
Crossmodulation V
V
amp.B
DS
dBµV
115
105
100
= 5 V, R
95
90
85
0
5
g1
10
= 56 kΩ
15
82k
20
unw
25
120k
= (AGC)
30
35
BG5412K
2009-10-01
40 dB
AGC
50