BG 5412K E6327 Infineon Technologies, BG 5412K E6327 Datasheet - Page 2

• Manufacturer Part Number: BG 5412K E6327
• Description: MOSFET N-CH DUAL 8V 25MA SOT-363
• Manufacturer: Infineon Technologies

Specifications of BG 5412K E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.1dB
• Current - Test: 10mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000468150

Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
amp. A
amp. B
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
T
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point
1
For calculation of R thJA please refer to Application Note Thermal Resistance
S
≤ 94 °C
1)
2
Symbol
V
I
I
V
P
T
T
Symbol
R
D
G1S
stg
ch
DS
G1S
tot
thchs
, I
, V
G2S
G2S
-55 ... 150
Value
Value
≤ 280
200
150
± 1
± 6
25
25
8
BG5412K
2009-10-01
Unit
V
mA
mA
V
mW
°C
Unit
K/W