BG 5412K E6327 Infineon Technologies, BG 5412K E6327 Datasheet - Page 5

• Manufacturer Part Number: BG 5412K E6327
• Description: MOSFET N-CH DUAL 8V 25MA SOT-363
• Manufacturer: Infineon Technologies

Specifications of BG 5412K E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.1dB
• Current - Test: 10mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000468150

shows pinning of BG5412K, switching pin at PIN 3
Functional diagram
(RFout
(RFin
G1
D
A
A
A
A
)
)
Amp. A
G2
(Ground)
(AGC)
G2
switch
S
S
Int.
V
GG
(RFout
(RFin
Amp. B
G1
G2
D
B
B
B
)
B
)
Amp. B
Amp. A
5
V
V
Rg1
gg
gg
= 0 V : Amp. A is ON ; Amp. B is OFF
= 5 V : Amp. A is OFF ; Amp. B is ON
V
GG
Amp. A and Amp. B share
bias network partially integrated
bias network fully
G2 and S pins
integrated
BG5412K
2009-10-01