BG 5412K E6327 Infineon Technologies, BG 5412K E6327 Datasheet - Page 3

• Manufacturer Part Number: BG 5412K E6327
• Description: MOSFET N-CH DUAL 8V 25MA SOT-363
• Manufacturer: Infineon Technologies

Specifications of BG 5412K E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.1dB
• Current - Test: 10mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000468150

Electrical Characteristics at T
Parameter
DC Characteristics
Drain-source breakdown voltage
I
Gate1-source breakdown voltage
+I
Gate2-source breakdown voltage
+I
Gate1-source leakage current
V
Gate2-source leakage current
V
Drain current
V
Drain-source current
V
amp. B
V
amp. A
Gate1-source pinch-off voltage
V
Gate2-source pinch-off voltage
V
D
G1S
G2S
DS
DS
DS
DS
DS
G1S
G2S
= 100 µA, V
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, I
= 6 V, V
= 8 V, V
= 10 mA, V
= 10 mA, V
D
G1S
G2S
G2S =
G2S
G2S
G1S
= 100 µA
G1S
= 0 , V
= 4 V, R
= 4 V, I
G2S
G1S
4 V, selfbiased,
= 0 , V
= 0
= 0 , V
= 0 , V
= 0 , V
G2S
D
DS
G1
G2S
= 100 µA
= 0
= 4 V
DS
DS
= 120 kΩ,
= 0
A
= 0
= 0
= 25°C, unless otherwise specified
3
Symbol
V
+V
+V
+I
+I
I
I
V
V
DSS
DSX
(BR)DS
G1S(p)
G2S(p)
G1SS
G2SS
(BR)G1SS
(BR)G2SS
min.
12
6
6
-
-
-
-
-
-
-
Values
typ.
0.7
0.7
14
18
-
-
-
-
-
-
max.
100
15
15
50
50
BG5412K
2009-10-01
-
-
-
-
-
Unit
V
nA
µA
mA
V