BG 5412K E6327 Infineon Technologies, BG 5412K E6327 Datasheet - Page 6

• Manufacturer Part Number: BG 5412K E6327
• Description: MOSFET N-CH DUAL 8V 25MA SOT-363
• Manufacturer: Infineon Technologies

Specifications of BG 5412K E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.1dB
• Current - Test: 10mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000468150

Total power dissipation P
Output characteristics I
V
V
G2
G1
mA
mA
220
180
160
140
120
100
= 4 V, amp. A
= Parameter
80
60
40
20
20
16
14
12
10
0
8
6
4
2
0
0
0
15
2
30
45
4
60
75
6
D
90 105 120 °C
= ƒ(V
tot
8
= ƒ(T
DS
1.3V
1.2V
1.4V
1.1V
1.5V
V
S
)
)
T
V
S
DS
150
12
6
Drain current I
V
V
Output characteristics I
V
V
G2S
DS
G2
G1
mA
mA
= 5 V
= 4 V, amp. B
= Parameter
30
20
15
10
20
16
14
12
10
= 4V, amp. B
5
0
8
6
4
2
0
0
0
10
2
D
20
4
= ƒ(I
30
6
G1
)
D
40
8
= ƒ(V
50
10
BG5412K
2009-10-01
DS
µA
)
V
I
V
1.6V
1.5V
1.4V
1.3V
1.2V
G1
DS
70
14