BG 5412K E6327 Infineon Technologies, BG 5412K E6327 Datasheet - Page 8

• Manufacturer Part Number: BG 5412K E6327
• Description: MOSFET N-CH DUAL 8V 25MA SOT-363
• Manufacturer: Infineon Technologies

Specifications of BG 5412K E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.1dB
• Current - Test: 10mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000468150

Drain current I
V
V
Drain current I
V
(connected to V GG , V GG =gate1 supply voltage)
DS
G2S
DS
mA
mA
= 5V, amp. B
= 5V, V
32
24
20
16
12
28
24
22
20
18
16
14
12
10
= Parameter
8
4
0
8
6
4
2
0
0
0
0.2 0.4 0.6 0.8
G2S
1
D
D
= 4V
= ƒ(V
= ƒ(V
2
G1S
GG
3
1
), amp. B
1.2 1.4 1.6
)
4
V
56K
68K
82K
100K
120K
150K
180K
V
V
V
1.5V
GG
G1S
4V
2V
=V
3V
2.5V
6
2
DS
8
Drain current I
V
(connected to V GG , V GG =gate1 supply voltage)
Drain current of FET A and FET B
as function of Gate 1 FET B
DS
mA
mA
= 5V, V
16
12
10
22
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
0
0
0.2
FET A
G2S
1
0.4
D
= 4V, R
= ƒ(V
0.6
2
GG
0.8
G1
), amp. B
= 100kΩ
3
1
BG5412K
2009-10-01
1.2
V
FET B
V
V
V
GG
G1_B
1.6
5