BG 5412K E6327 Infineon Technologies, BG 5412K E6327 Datasheet

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BG 5412K E6327

Manufacturer Part Number
BG 5412K E6327
Description
MOSFET N-CH DUAL 8V 25MA SOT-363
Manufacturer
Infineon Technologies
Datasheet

Specifications of BG 5412K E6327

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 N-Channel (Dual)
Frequency
800MHz
Gain
24dB
Voltage - Rated
8V
Current Rating
25mA
Noise Figure
1.1dB
Current - Test
10mA
Voltage - Test
5V
Configuration
Single Dual Gate
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.025 A
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000468150
Dual N-Channel MOSFET Tetrode
• Designed for input stages of 2 band tuners
• Two AGC amplifiers in one single package,
• Only one switching line to control both FETs
• Integrated gate protection diodes
• Ultra low noise figure
• Excellent cross modulation at gain reduction
• Integrated ESD gate protection diodes
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Detailed functional diagram on page 5
BG5412K
ESD ( E lectro s tatic d ischarge) sensitive device, observe handling precaution!
Type
BG5412K
* For amp. A; ** for amp. B
180° rotated tape loading orientation available
with on-chip internal switch
6
1
A
5
2
B
4
3
Package
SOT363
1=G1* 2=G2
1
Pin Configuration
3=G1** 4=D**
5=S
6
5
4
6=D*
BG5412K
2009-10-01
1
Marking
K2s
2
3

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BG 5412K E6327 Summary of contents

Page 1

Dual N-Channel MOSFET Tetrode • Designed for input stages of 2 band tuners • Two AGC amplifiers in one single package, with on-chip internal switch • Only one switching line to control both FETs • Integrated gate protection diodes • ...

Page 2

Maximum Ratings Parameter Drain-source voltage Continuous drain current amp. A amp. B Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation ≤ 94 ° Storage temperature Channel temperature Thermal Resistance Parameter 1) Channel - ...

Page 3

Electrical Characteristics at T Parameter DC Characteristics Drain-source breakdown voltage I = 100 µ G1S G2S Gate1-source breakdown voltage + mA G1S G2S Gate2-source breakdown voltage +I ...

Page 4

Electrical Characteristics at T Parameter AC Characteristics Forward transconductance amp. A amp. B Gate1 input capacitance amp. A amp. B Output capacitance amp. A amp. B Power gain f= 800 MHz, amp ...

Page 5

Functional diagram shows pinning of BG5412K, switching pin at PIN (RFout ) (Ground Amp. A Int. switch (RFin ) (AGC (RFout ) B Amp. B Amp. A ...

Page 6

Total power dissipation P 220 mA 180 160 140 120 100 Output characteristics amp Parameter ...

Page 7

Gate 1 current I G1 G1S Parameter G2S 150 µA 100 0.4 0.8 1.2 1.6 Gate 1 forward transconductance = ƒ( amp ...

Page 8

Drain current I D G1S V = 5V, amp Parameter G2S 0.2 0.4 0.6 0.8 1 Drain current I = ƒ(V ), amp. B ...

Page 9

AGC characteristic AGC = ƒ( MHz, amp -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 0 0.5 1 1.5 2 AGC characteristic AGC = ƒ(V f= 800MHz, amp ...

Page 10

Crossmodulation V = (AGC) unw 120 kΩ amp.A 115 dBµV 105 100 Crossmodulation amp.B 115 dBµV ...

Page 11

Crossmodulation test circuit R GEN 50Ω R GEN 50Ω AGC DS 4n7 R1 10kΩ 2.2 uH 4n7 4n7 50 Ω RG1 AGC DS 4n7 R1 10kΩ 2.2 uH 4n7 4n7 50 Ω 11 BG5412K ...

Page 12

Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...

Page 13

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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