BG 5412K E6327 Infineon Technologies, BG 5412K E6327 Datasheet - Page 7

• Manufacturer Part Number: BG 5412K E6327
• Description: MOSFET N-CH DUAL 8V 25MA SOT-363
• Manufacturer: Infineon Technologies

Specifications of BG 5412K E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.1dB
• Current - Test: 10mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000468150

Gate 1 current I
V
V
Gate 1 forward transconductance
g
V
fs
DS
G2S
DS
= ƒ(I
mS
µA
150
100
= 5V
= 5V, V
75
50
25
40
30
25
20
15
10
-5
= Parameter
0
5
0
0
0
D
), amp. B
0.4
5
G2S
10
0.8
G1
= Parameter
15
1.2
2V
= ƒ(V
20
1.6
G1S
25
2.5V
2
)
30
2.4
3V
35 mA
3.5V
V
V
I
D
G1S
4V
4V
3.5V
3V
2.5V
2V
3.2
45
7
Gate 1 forward transconductance
g
V
Drain current I
V
V
fs
DS
DS
G2S
= ƒ(I
mS
mA
= 5V, V
= 5V, amp. A
45
35
30
25
20
15
10
36
28
24
20
16
12
= Parameter
5
0
8
4
0
0
0
D
0.2 0.4 0.6 0.8
); amp.A
5
G2S
1.5V
10
D
= Parameter
15
= ƒ(V
2V
20
G1S
25
1
1.2 1.4 1.6
30
)
2.5V
35
BG5412K
2009-10-01
40 mA
3V
4V
I
4V
V
D
V
G1S
3V
2.5V
2V
50
1.5V
2