BG 5412K E6327 Infineon Technologies, BG 5412K E6327 Datasheet - Page 4

• Manufacturer Part Number: BG 5412K E6327
• Description: MOSFET N-CH DUAL 8V 25MA SOT-363
• Manufacturer: Infineon Technologies

Specifications of BG 5412K E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.1dB
• Current - Test: 10mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000468150

Electrical Characteristics at T
Parameter
AC Characteristics V
Forward transconductance
amp. A
amp. B
Gate1 input capacitance
amp. A
amp. B
Output capacitance
amp. A
amp. B
Power gain
f= 800 MHz, amp. A
f= 800 MHz, amp. B
f= 45 MHz, amp. A
f= 45 MHz, amp. B
Noise figure
f= 800 MHz, amp. A
f= 800 MHz, amp. B
f= 45 MHz, amp. A
f= 45 MHz, amp. B
Gain control range
V
Cross-modulation k
amp. A, AGC = 0 dB
amp. B, AGC = 0 dB
amp. A, AGC = 10 dB
amp. B, AGC = 10 dB
amp. A, AGC = 40 dB
amp. B, AGC = 40 dB
G2S
= 4...0 V, f = 800 MHz
=
1%, f
DS
= 5 V, V
W
=
50MHz, f
A
= 25°C, unless otherwise specified
G2
= 4 V, I
unw
=
60MHz
D
= 10 mA (verified by random sampling)
4
Symbol
g
C
C
G
F
∆G
X
fs
mod
g1ss
dss
p
p
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
105
103
typ.
2.2
0.9
0.8
1.1
1.2
0.8
0.9
33
30
24
24
34
31
45
97
96
94
91
2
max.
BG5412K
2009-10-01
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-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
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Unit
mS
pF
dB
dB
-