FDR858P Fairchild Semiconductor, FDR858P Datasheet - Page 91

• Manufacturer Part Number: FDR858P
• Description: MOSFET P-CH 30V 8A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDR858P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 5V
• Input Capacitance (ciss) @ Vds: 2010pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Dc: 9940
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDR858P; FDR858PTR

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Bipolar Power Transistors – General Purpose Transistors (Continued)
BD240B
BD240C
KSB546
KSA473
TIP32
BD242
KSA614
BD242A
TIP32A
KSB834
BD242B
TIP32B
BD242C
TIP32C
KSB596
TIP42
BD244
BD244A
TIP42B
BD244B
TIP42C
BD244C
KSB707
KSB708
KSA1010
BD534
BD536
BD538
KSE2955T
MJE2955T
KSE45H
TO-220F NPN Configuration
KSC3296
KSD401
KSD1406
Products
I
C
1.5
10
10
10
2
2
2
3
3
3
3
3
3
3
3
3
3
3
4
6
6
6
6
6
6
6
7
7
7
8
8
8
2
3
(A) V
CEO
100
150
100
100
100
100
100
150
150
80
30
40
45
55
60
60
60
80
80
80
40
45
60
80
80
60
80
45
60
80
60
60
80
60
(V) V
CBO
115
200
115
100
100
100
100
150
200
90
30
40
55
80
70
60
60
90
80
80
40
45
60
80
80
80
80
45
60
80
70
70
60
–
(V) V
EBO
5
5
5
5
5
5
5
5
5
7
5
5
5
5
5
5
5
5
5
5
5
5
7
7
7
5
5
5
5
5
5
5
5
7
(V) P
C
30
30
25
10
40
40
25
40
40
30
40
40
40
40
30
65
65
65
65
65
65
65
40
40
40
50
50
50
75
75
50
20
25
25
(W)
Min
15
15
40
70
10
10
40
10
10
60
10
10
10
10
40
15
30
30
15
30
15
30
40
40
40
20
20
15
20
20
60
40
40
60
2-86
Discrete Power Products –
Max
240
240
240
200
240
200
200
200
100
100
140
400
300
50
50
50
50
75
75
75
–
–
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@I
0.01
0.01
0.01
0.4
0.5
0.5
0.5
0.5
0.3
0.3
0.3
0.3
0.5
0.4
0.5
C
1
1
3
3
3
3
3
3
3
3
3
3
3
3
3
3
4
4
2
(A) @V
10
10
10
CE
4
2
4
4
5
4
4
4
4
4
4
1
5
5
4
4
4
5
4
4
4
5
4
4
4
1
5
5
4
1
5
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
0.15
0.3
0.5
0.4
–
–
–
–
–
–
–
–
–
–
–
1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.7
0.7
0.8
1.2
1.2
0.5
1.2
1.2
1.2
1.2
1.2
1.2
1.7
1.5
1.5
1.5
1.5
1.5
1.5
1.5
0.5
0.5
0.6
0.8
0.8
0.8
1.1
1.1
1.5
1
1
1
1
1
V
CE (sat)
0.5
0.5
0.5
C
1
1
2
3
3
1
3
3
3
3
3
3
3
3
6
6
6
6
6
6
6
5
5
5
2
2
2
4
4
8
3
(A) @I
0.375
0.375
0.375
0.375
0.05
0.05
0.05
0.2
0.2
0.2
0.6
0.1
0.6
0.3
0.6
0.6
0.3
0.6
0.6
0.6
0.5
0.5
0.5
0.2
0.2
0.2
0.4
0.4
0.4
0.3
B
1
1
1
1
(A)