FDR858P Fairchild Semiconductor, FDR858P Datasheet - Page 163

• Manufacturer Part Number: FDR858P
• Description: MOSFET P-CH 30V 8A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDR858P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 5V
• Input Capacitance (ciss) @ Vds: 2010pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Dc: 9940
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDR858P; FDR858PTR

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Transient Voltage Suppressors (Continued)
SMCJ170CA
Products
Voltage (V)
Stand-off
Reverse
V
170
RWM
V
Min
189
BR
Voltage (V)
Breakdown
Max
209
Condition
I
T
Test
(mA)
1
Voltage @ I
Max Clamping
2-158
275
V
C
PPM
(V)
Discrete Power Products –
Surge Current (A)
Max Peak Pulse
I
PPM
5.5
Leakage @ V
I
R
Max Reverse
(µA)
5
RWM
Diodes and Rectifiers
P
PPM
1500
(W)
Bidirectional
Direction