FDR858P Fairchild Semiconductor, FDR858P Datasheet - Page 82

• Manufacturer Part Number: FDR858P
• Description: MOSFET P-CH 30V 8A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDR858P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 5V
• Input Capacitance (ciss) @ Vds: 2010pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Dc: 9940
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDR858P; FDR858PTR

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Bipolar Power Transistors – Darlington Transistors
Products
TO-126 NPN Configuration
KSD985
KSD986
KSD1692
BD675A
BD677A
KSE800
KSE801
MJE800
MJE801
BD679A
KSE802
KSE803
MJE802
MJE803
BD681
TO-126 PNP Configuration
KSB794
KSB795
KSB1149
BD676A
BD678A
KSE700
KSE701
MJE700
MJE701
BD680A
KSE702
KSE703
MJE702
MJE703
BD682
TO-220 NPN Configuration
TIP110
TIP111
I
C
1.5
1.5
1.5
1.5
3
4
4
4
4
4
4
4
4
4
4
4
4
3
4
4
4
4
4
4
4
4
4
4
4
4
2
2
(A)
V
CEO
100
100
100
100
60
80
45
60
60
60
60
60
80
80
80
80
80
60
80
45
60
60
60
60
60
80
80
80
80
80
60
80
(V) V
CBO
150
150
150
100
100
100
45
60
60
60
60
60
80
80
80
80
80
60
80
45
60
60
60
60
60
80
80
80
80
80
60
80
(V) V
EBO
8
8
8
5
5
5
5
5
5
5
5
5
5
5
5
8
8
8
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V)
P
C
10
10
15
14
14
14
14
14
14
14
14
14
14
14
14
10
10
15
14
14
14
14
14
14
14
14
14
14
14
14
50
50
(W)
2000
2000
2000
2000
2000
2000
Min
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
500
500
2-77
Discrete Power Products –
30000
30000
20000
30000
30000
20000
Max
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@I
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
C
1
1
2
2
2
2
2
2
2
1
1
2
2
2
2
2
2
2
2
2
(A) @V
Bold = New Products (introduced January 2003 or later)
CE
2
2
2
3
3
3
3
3
3
3
3
3
3
3
3
2
2
2
3
3
3
3
3
3
3
3
3
3
3
3
4
4
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
0.9
0.9
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1.5
1.5
1.2
2.8
2.8
2.5
2.8
2.5
2.8
2.8
2.5
2.8
2.5
2.8
2.5
1.5
1.5
1.2
2.8
2.8
2.5
2.8
2.5
2.8
2.8
2.5
2.8
2.5
2.8
2.5
2.5
2.5
V
CE
(sat)
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
C
1
1
2
2
2
2
2
2
2
1
1
2
2
2
2
2
2
2
2
2
(A) @I
0.001
0.001
0.002
0.001
0.001
0.002
0.008
0.008
0.04
0.04
0.04
0.04
0.04
0.03
0.04
0.03
0.04
0.03
0.04
0.04
0.04
0.04
0.04
0.03
0.04
0.03
0.04
0.03
0.03
0.03
0.03
0.03
B
(A)