FDR858P Fairchild Semiconductor, FDR858P Datasheet - Page 130
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FDR858P
Manufacturer Part Number
FDR858P
Description
MOSFET P-CH 30V 8A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR858P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 5V
Input Capacitance (ciss) @ Vds
2010pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Dc
9940
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDR858P
FDR858PTR
FDR858PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDR858P
Manufacturer:
2005+
Quantity:
3 000
Part Number:
FDR858P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDR858P*
Manufacturer:
Winbond
Quantity:
439
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Rectifiers – HyperFast Recovery Rectifiers
TO-220
RHRP860
RHRP1560
RHRP3060
RHRP8120
RHRP15120
RHRP30120
TO-247
RHRG1560CC
RHRG3060
RHRG3060CC
RHRG5060
RHRG30120
RHRG75120
TO-252(DPAK)
RHRD660S
Products
Common Cathode
Common Cathode
Configuration
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
V
RRM
1200
1200
1200
1200
1200
600
600
600
600
600
600
600
600
(V)
I
F (AV)
15
30
15
30
15
30
30
50
30
75
8
8
6
(A)
V
F
2-125
Max (V)
2.1
2.1
2.1
3.2
3.2
1.5
2.1
2.1
2.1
3.2
3.2
2.1
3
Discrete Power Products –
t
rr
Max (ns)
100
35
40
45
70
75
75
60
45
45
50
75
35
I
RM
or I
(µA)
100
100
100
100
100
250
100
100
100
250
100
250
100
R
Max
t
a
Typ (ns)
Diodes and Rectifiers
@125°C
18
20
22
30
36
35
30
22
22
25
48
60
16
t
b
Typ (ns)
@125°C
10
15
18
20
28
33
17
18
18
20
22
25
8
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