FDR858P Fairchild Semiconductor, FDR858P Datasheet - Page 210

• Manufacturer Part Number: FDR858P
• Description: MOSFET P-CH 30V 8A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDR858P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 5V
• Input Capacitance (ciss) @ Vds: 2010pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Dc: 9940
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDR858P; FDR858PTR

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Discrete
Discrete IGBT (SMPS II)
FG H
30
(Continued)
N 6
S
2
D
D: Integral Reverse Diode
i.e., 2 = SMPS II (UIS, LGC, LVp)
S: SMPS
M: Motor Drive
I: Induction Heating
C: Camera Flash
i.e., (600)
N-Channel or P-Channel
D: 3 Lead TO-252
B: 3 Lead TO-263
P: 3 Lead TO-220
H: 3 Lead TO-247
L: 3 Lead TO-264
J: 3 Lead TO-268
K: 3 Lead TO-247ST
Options
General Application
Intended Application
Voltage Breakdown/100
Polarity
Relative Die Size
Package
Fairchild IGBT
8-17
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