FDR858P Fairchild Semiconductor, FDR858P Datasheet - Page 84

• Manufacturer Part Number: FDR858P
• Description: MOSFET P-CH 30V 8A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDR858P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 5V
• Input Capacitance (ciss) @ Vds: 2010pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Dc: 9940
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDR858P; FDR858PTR

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Bipolar Power Transistors – Darlington Transistors (Continued)
Products
TIP127
KSB601
BDW24
BDW24A
BDW24B
BDW24C
BDX54
BDX54A
TIP105
BDX54B
TIP106
BDX54C
TIP107
BDX34A
BDX34B
TIP146T
BDX34C
TIP147T
BDW94
BDW94C
TO-220F NPN Configuration
KSD1413
KSD1589
KSD1417
BDW93CF
TO-220F PNP Configuration
FJPF9020
KSB1023
KSB1098
KSB1022
TO-251(IPAK) NPN Configuration
KSD1222
TO-251(IPAK) PNP Configuration
KSB907
I
C
10
10
10
10
10
12
12
12
5
5
6
6
6
6
8
8
8
8
8
8
8
3
5
7
2
3
5
7
3
3
(A)
V
CEO
100
100
100
100
100
100
100
100
100
100
550
100
45
60
80
45
60
60
80
80
60
80
80
45
60
60
60
60
40
40
(V) V
CBO
100
100
100
100
100
100
100
100
150
100
550
100
45
60
80
45
60
60
80
80
60
80
80
45
60
60
60
60
60
60
(V) V
EBO
–
–
–
–
–
–
5
7
5
5
5
5
5
5
5
5
5
5
5
5
5
5
7
5
6
5
7
5
5
5
(V)
P
C
65
30
50
50
50
50
60
60
80
60
80
60
80
70
70
80
70
80
80
80
20
20
30
30
15
20
20
30
15
15
(W)
1000
2000
1000
1000
1000
1000
1000
2000
2000
2000
2000
2000
2000
2000
2000
Min
750
750
750
750
750
750
750
750
750
750
750
750
750
750
400
2-79
Discrete Power Products –
15000
20000
20000
20000
20000
20000
20000
20000
20000
20000
15000
15000
20000
15000
15000
Max
700
–
–
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@I
0.5
C
3
2
2
2
2
3
3
3
3
3
3
3
4
3
5
3
5
5
5
1
3
3
5
1
1
3
3
1
1
(A) @V
CE
3
2
3
3
3
3
3
3
4
3
4
3
4
3
3
4
3
4
3
3
2
2
3
–
4
2
2
3
2
2
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
0.95
0.9
0.9
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1.5
2.5
2.5
2.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
V
CE
(sat)
C
3
3
2
2
2
2
3
3
3
3
3
3
3
4
3
5
3
5
5
5
2
3
3
5
1
2
3
3
2
2
(A) @I
0.012
0.003
0.008
0.008
0.008
0.008
0.012
0.012
0.006
0.012
0.006
0.012
0.006
0.008
0.006
0.006
0.004
0.003
0.006
0.004
0.003
0.006
0.004
0.004
0.01
0.01
0.02
0.02
0.02
0.02
B
(A)