FDS6982AS Fairchild Semiconductor, FDS6982AS Datasheet - Page 9

• Manufacturer Part Number: FDS6982AS
• Description: MOSFET N-CH DUAL 30V SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6982AS

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.3A, 8.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 610pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V Ohm @ Q1
• Forward Transconductance Gfs (max / Min): 32 S, 19 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: + /- 20 V
• Continuous Drain Current: 6.3 A @ Q1
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6982AS; FDS6982ASTR

Typical Characteristics
Figure 26. Unclamped Inductive Load Test
Figure 28. Gate Charge Test Circuit
Figure 30. Switching Time Test
+
R
-
10V
V
GE
vary t
required peak I
V
V
GS
Drain Current
I
Circuit
R
GS
GS
g(REF
10µF
Same type as
P
V
GEN
0V
Duty Cycle ≤ 0.1%
Pulse Width ≤ 1µs
to obtain
DS
V
tp
V
GS
50kΩ
GS
V
Circuit
AS
DS
1µF
I
AS
0.01Ω
DUT
L
DUT
R
DUT
L
+
-
+
-
+
-
V
V
V
DD
DD
DD
Figure 27. Unclamped Inductive
10V
V
V
V
Figure 29. Gate Charge Waveform
GS
DS
GS
Figure 31. Switching Time Waveforms
0V
0V
10%
Q
t
d(ON)
90%
GS
Waveforms
Charge, (nC)
t
50%
ON
Q
10%
Pulse Width
I
G(TOT)
t
AS
Q
r
GD
t
P
BV
t
AV
DSS
t
)
d(OFF
90%
50%
t
OFF
V
t
10%
FDS6982AS Rev B1
f
DS
V
90%
DD