FDS6982AS Fairchild Semiconductor, FDS6982AS Datasheet - Page 7

• Manufacturer Part Number: FDS6982AS
• Description: MOSFET N-CH DUAL 30V SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6982AS

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.3A, 8.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 610pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V Ohm @ Q1
• Forward Transconductance Gfs (max / Min): 32 S, 19 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: + /- 20 V
• Continuous Drain Current: 6.3 A @ Q1
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6982AS; FDS6982ASTR

Typical Characteristics Q1
0.01
10
Figure 20. Maximum Safe Operating Area.
100
8
6
4
2
0
0.1
10
Figure 18. Gate Charge Characteristics.
1
0
0.1
0.001
0.01
R
I
SINGLE PULSE
R
0.1
D
DS(ON)
0.0001
θ JA
= 6.3A
1
V
T
GS
A
= 135
= 25
= 10V
LIMIT
o
o
C
C/W
3
V
D = 0.5
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
0.2
1
0.1
g
, GATE CHARGE (nC)
0.05
0.02
0.001
0.01
V
DC
DS
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
SINGLE PULSE
10s
= 10V
6
1s
Figure 22. Transient Thermal Response Curve.
100ms
15V
10ms
10
1ms
0.01
20V
9
100 µ s
100
12
0.1
t
1
, TIME (sec)
50
40
30
20
10
800
600
400
200
0
0.001
Figure 19. Capacitance Characteristics.
0
0
1
Figure 21. Single Pulse Maximum
C
rss
0.01
Power Dissipation.
V
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
C
t
1
oss
, TIME (sec)
1
10
P(pk)
Duty Cycle, D = t
T
R
J
R
θJA
- T
100
θJA
(t) = r(t) * R
10
A
t
= 135°C/W
1
= P * R
t
C
2
iss
SINGLE PULSE
R
15
FDS6982AS Rev B1
θ JA
T
θJA
A
100
= 135°C/W
θJA
1
= 25°C
(t)
/ t
V
f = 1MHz
2
GS
1000
= 0 V
1000
20