FDS6982AS Fairchild Semiconductor, FDS6982AS Datasheet - Page 2

• Manufacturer Part Number: FDS6982AS
• Description: MOSFET N-CH DUAL 30V SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6982AS

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.3A, 8.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 610pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V Ohm @ Q1
• Forward Transconductance Gfs (max / Min): 32 S, 19 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: + /- 20 V
• Continuous Drain Current: 6.3 A @ Q1
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6982AS; FDS6982ASTR

BV
∆BV
I
I
Symbol
V
∆V
R
I
g
C
C
C
R
Switching Characteristics
t
t
t
t
t
t
t
t
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
DSS
GSS
D(on)
d(on)
r
d(off)
f
d(on)
r
d(off)
f
FS
∆T
GS(th)
DS(on)
iss
oss
rss
G
∆T
DSS
GS(th)
DSS
J
J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Parameter
(Note 2)
(Note 2)
V
V
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
I
I
V
V
V
V
V
V
D
D
f = 1.0 MHz
D
D
DS
DS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
GS
GS
GS
DS
GS
DD
GS
DD
GS
= 1 mA, Referenced to 25°C
= 250 uA, Referenced to 25°C
= 1 mA, Referenced to 25°C
= 250 µA, Referenced to 25°C
= V
= V
= 5 V,
= 5 V,
= 10 V, I
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
= 4.5 V, I
= 10 V,
= 10 V,
= 15mV,
= 0 V,
= 0 V,
= 24 V,
= ±20 V, V
= 15 V,
= 10V, R
= 15 V,
= 4.5V, R
GS
GS
Test Conditions
T
A
,
,
= 25°C unless otherwise noted
D
D
D
D
D
D
GEN
GEN
= 8.6 A
= 8.6 A, T
= 6.3 A
= 6.3 A, T
= 7.5 A
= 5.6 A
I
I
V
I
I
V
I
I
V
f = 1.0 MHz
I
I
D
D
D
D
D
D
D
D
GS
DS
DS
GS
= 6 Ω
= 1 mA
= 250 uA
= 1 mA
= 250 µA
= 8.6 A
= 6.3 A
= 1 A,
= 1 A,
= 6 Ω
= 0 V
= 5 V
= 0 V
= 0 V,
J
J
= 125°C
= 125°C
Type Min Typ Max Units
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
30
20
30
30
1
1
1250
–3.1
–4.3
610
410
180
130
1.4
2.2
1.4
1.9
85
10
27
24
11
12
12
13
14
19
15
10
28
24
11
16
13
26
25
32
19
20
9
6
7
3
5
±100
FDS6982AS Rev B1
13.5
20.0
16.5
500
18
20
12
14
44
39
20
22
22
23
25
34
27
20
10
28
33
35
6
1
3
3
mV/°C
mV/°C
mΩ
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
µA
nA
Ω
V
A
S
V