FDS6982AS Fairchild Semiconductor, FDS6982AS Datasheet - Page 8

• Manufacturer Part Number: FDS6982AS
• Description: MOSFET N-CH DUAL 30V SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6982AS

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.3A, 8.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 610pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V Ohm @ Q1
• Forward Transconductance Gfs (max / Min): 32 S, 19 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: + /- 20 V
• Continuous Drain Current: 6.3 A @ Q1
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6982AS; FDS6982ASTR

Typical Characteristics
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET.
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 23
shows the reverse recovery characteristic of the
FDS6982AS.
For comparison purposes, Figure 24 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6982).
Figure 24. Non-SyncFET (FDS6982) body
Figure 23. FDS6982AS SyncFET body
diode reverse recovery characteristic.
diode reverse recovery characteristic.
Time: 10nS/DIV
Time: 10nS/DIV
(continued)
This diode
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.000001
0.00001
leakage versus drain-source voltage and
0.0001
Figure 25. SyncFET body diode reverse
0.001
0.01
0.1
0
5
temperature
V
DS
10
, REVERSE VOLTAGE (V)
T
T
T
A
A
A
= 125
= 100
15
= 25
o
o
o
C
C
C
20
FDS6982AS Rev B1
25
30