FDS6982AS Fairchild Semiconductor, FDS6982AS Datasheet
FDS6982AS
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FDS6982ASTR
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FDS6982AS Summary of contents
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... FDS6982AS Dual Notebook Power Supply N-Channel PowerTrench General Description The FDS6982AS is designed to replace two single SO- 8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6982AS contains two ...
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... 6 6 125° 1.0 MHz V = 15mV 1.0 MHz 10V Ω GS GEN 4.5V Ω GS GEN mV/° 500 µ ±100 1 1 –3.1 mV/°C Q1 –4 13.5 mΩ 16 20 1250 pF Q1 610 Q2 410 pF Q1 180 Q2 130 1.4 Ω FDS6982AS Rev B1 ...
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... A (Note (Note 1.3 A (Note determined by the user's board design. θCA b) 125°C/W when mounted 0.02 in pad copper Type Min Typ Max Units 3 1 2 0.5 Q2 0.7 V 0.6 1.0 Q2 0.8 1 135°C/W when mounted on a minimum pad. FDS6982AS Rev B1 ...
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... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 2.5V 3.0V 3.5V 4.0V 4.5V 6.0V 10V DRAIN CURRENT ( 4 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6982AS Rev 0.8 ...
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... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C/W θ 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 135°C/W θJA P(pk ( θJA Duty Cycle 100 1000 FDS6982AS Rev B1 30 ...
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... Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature. = 3.0V GS 3.5V 4.0V 4.5V 6.0V 10V DRAIN CURRENT ( 3. 125 GATE TO SOURCE VOLTAGE ( Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6982AS Rev 1.4 ...
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... Figure 21. Single Pulse Maximum 0.01 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C/W θ 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 135°C/W θJA P(pk ( θJA Duty Cycle 100 1000 FDS6982AS Rev B1 ...
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... Schottky diode in parallel with a MOSFET. Figure 23 shows the reverse recovery characteristic of the FDS6982AS. Time: 10nS/DIV Figure 23. FDS6982AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 24 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6982) ...
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... Pulse Width ≤ 1µs Duty Cycle ≤ 0.1% Figure 30. Switching Time Test Circuit + Figure 27. Unclamped Inductive Waveforms + 10V DUT Charge, (nC) Figure 29. Gate Charge Waveform d(ON 90% + DUT 50% 10% 0V Figure 31. Switching Time Waveforms BV DSS G(TOT OFF t d(OFF 90% 10% 10% 90% 50% Pulse Width FDS6982AS Rev B1 ...
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... Fairchild Semiconductor. The datasheet is for reference information only. ® The Power Franchise tm TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ Definition Rev. I34 FDS6982AS Rev.B1 ...