FDS6982AS Fairchild Semiconductor, FDS6982AS Datasheet - Page 6
![MOSFET N-CH DUAL 30V SO-8](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS6982AS
Manufacturer Part Number
FDS6982AS
Description
MOSFET N-CH DUAL 30V SO-8
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6982AS.pdf
(10 pages)
Specifications of FDS6982AS
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 6.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.3A, 8.6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
610pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.028 Ohm @ 10 V Ohm @ Q1
Forward Transconductance Gfs (max / Min)
32 S, 19 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+ /- 20 V
Continuous Drain Current
6.3 A @ Q1
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS6982AS
FDS6982ASTR
FDS6982ASTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6982AS
Manufacturer:
FSC
Quantity:
30 000
Company:
Part Number:
FDS6982AS
Manufacturer:
FSC
Quantity:
12 500
Company:
Part Number:
FDS6982AS
Manufacturer:
FAIRCHILD
Quantity:
50 000
Part Number:
FDS6982AS
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
FDS6982AS/ROHS
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics Q1
20
15
10
20
16
12
5
0
8
4
0
1.6
1.4
1.2
0.8
0.6
Figure 14. On-Resistance Variation with
1
0
Figure 12. On-Region Characteristics.
1
-50
Figure 16. Transfer Characteristics.
V
DS
V
= 5V
GS
V
6.0V
I
D
= 10V
GS
-25
= 6.3A
= 10V
1.5
V
GS
V
T
, GATE TO SOURCE VOLTAGE (V)
DS
0
J
, JUNCTION TEMPERATURE (
, DRAIN-SOURCE VOLTAGE (V)
Temperature.
4.5V
4.0V
2
25
1
50
T
3.5V
A
2.5
= 125
75
o
3.0V
C
100
o
C)
25
3
o
C
-55
125
o
C
3.5
150
2
Figure 17. Body Diode Forward Voltage Variation
0.0001
0.08
0.06
0.04
0.02
0.001
0.1
0.01
100
0
2.6
2.2
1.8
1.4
0.6
0.1
Figure 13. On-Resistance Variation with
Figure 15. On-Resistance Variation with
10
with Source Current and Temperature.
1
1
2
0
0
Drain Current and Gate Voltage.
V
GS
T
= 0V
V
A
0.2
GS
= 25
3.5V
Gate-to-Source Voltage.
V
= 3.0V
SD
o
V
C
, BODY DIODE FORWARD VOLTAGE (V)
4
GS
T
5
, GATE TO SOURCE VOLTAGE (V)
A
0.4
= 125
4.0V
I
D
, DRAIN CURRENT (A)
o
C
T
0.6
A
= 125
4.5V
25
6
10
o
C
o
C
0.8
6.0V
-55
o
C
1
15
FDS6982AS Rev B1
8
10V
I
D
1.2
= 3.15 A
1.4
20
10