FDS4897AC Fairchild Semiconductor, FDS4897AC Datasheet - Page 8

• Manufacturer Part Number: FDS4897AC
• Description: MOSFET N/P-CH 40V 6.1/5.2A SO8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4897AC

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 6.1A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6.1A, 5.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 1055pF @ 20V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.026 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.1 A @ N Channel or 5.2 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4897ACTR

FDS4897AC Rev.C
©2008 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 P-Channel)
0.01
0.1
30
10
10
10
1
8
6
4
2
0
0.01
9
8
7
6
5
4
3
2
1
Figure 21. Gate Charge Characteristics
0
0.1
I
THIS AREA IS
LIMITED BY r
D
= -5.2 A
Figure 23. Unclamped Inductive
Figure 25. Forward Bias Safe
-V
V
DS
0.1
Switching Capability
DD
t
4
, DRAIN to SOURCE VOLTAGE (V)
AV
ds(on)
= -20 V
Q
Operating Area
, TIME IN AVALANCHE (ms)
g
SINGLE PULSE
T
R
T
, GATE CHARGE (nC)
J
A
θ
V
JA
= MAX RATED
= 25
DD
1
= 135
= -15 V
o
1
C
T
J
8
o
= 125
C/W
V
o
DD
C
10
= -25 V
12
10
T
J
= 25
100 ms
10 s
DC
100 us
10 ms
1 s
1 ms
100
o
C
200
16
40
8
T
J
= 25 °C unless otherwise noted
1000
100
2000
1000
Figure 24. Maximum Continuous Drain
Figure 26. Single Pulse Maximum Power
0.5
6
5
4
3
2
1
0
10
100
25
1
10
10
0.1
Current vs Ambient Temperature
-4
R
Figure 22. Capacitance vs Drain
θ
f = 1 MHz
V
JA
GS
V
= 78
10
GS
= 0 V
-3
50
= -10 V
T
-V
o
C
to Source Voltage
C/W
DS
,
AMBIENT TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
10
Dissipation
V
-2
t, PULSE WIDTH (sec)
GS
75
= -4.5 V
1
10
-1
100
SINGLE PULSE
R
1
θ
JA
V
GS
= 135
= -10 V
10
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o
C )
125
o
10
C/W
C
C
C
100
iss
oss
rss
150
1000
40