FDS4897AC Fairchild Semiconductor, FDS4897AC Datasheet - Page 7

• Manufacturer Part Number: FDS4897AC
• Description: MOSFET N/P-CH 40V 6.1/5.2A SO8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4897AC

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 6.1A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6.1A, 5.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 1055pF @ 20V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.026 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.1 A @ N Channel or 5.2 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4897ACTR

FDS4897AC Rev.C
©2008 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 P-Channel)
24
20
16
12
1.8
1.6
1.4
1.2
1.0
0.8
0.6
24
20
16
12
8
4
0
0.0
Figure 15. On- Region Characteristics
8
4
0
Figure 17. Normalized On-Resistance
-75
1
Figure 19. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DS
I
V
D
GS
-50
= -5.2 A
= -5 V
0.5
vs Junction Temperature
= -10 V
-V
-V
T
DS
-25
J
GS
,
,
2
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
1.0
T
J
V
0
= 25
GS
T
= -4.5 V
J
o
25
= 150
C
µ
1.5
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
3
V
GS
o
50
C
V
= -5 V
GS
2.0
= -10 V
75
T
J
= -55
4
o
V
100 125 150
C )
V
GS
2.5
GS
o
= -3.5 V
C
= - 4 V
µ
s
3.0
5
T
J
7
= 25 °C unless otherwise noted
Figure 16. Normalized on-Resistance vs Drain
0.001
0.01
120
100
0.5
0.1
80
60
40
20
40
10
5
4
3
2
1
1
Figure 18. On-Resistance vs Gate to
0.0
Forward Voltage vs Source Current
0
2
Figure 20. Source to Drain Diode
V
GS
Current and Gate Voltage
-V
= 0 V
0.2
-V
SD
4
T
GS
, BODY DIODE FORWARD VOLTAGE (V)
J
V
= 150
-
, GATE TO SOURCE VOLTAGE (V)
Source Voltage
I
GS
4
D
,
I
T
= -3.5 V
DRAIN CURRENT (A)
D
J
0.4
= -5.2 A
o
8
= 25
C
o
C
0.6
12
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
0.8
16
T
T
J
= -4 V
J
= 125
= -55
8
www.fairchildsemi.com
T
V
J
V
GS
o
V
1.0
= 25
GS
o
20
C
GS
C
= -4.5 V
= -10 V
= -5 V
o
C
µ
µ
s
s
1.2
24
10