FDS4897AC Fairchild Semiconductor, FDS4897AC Datasheet - Page 2

MOSFET N/P-CH 40V 6.1/5.2A SO8

FDS4897AC

Manufacturer Part Number
FDS4897AC
Description
MOSFET N/P-CH 40V 6.1/5.2A SO8
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS4897AC

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
26 mOhm @ 6.1A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
6.1A, 5.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
21nC @ 10V
Input Capacitance (ciss) @ Vds
1055pF @ 20V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.026 Ohm @ 10 V @ N Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.1 A @ N Channel or 5.2 A @ P Channel
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS4897ACTR

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FDS4897AC Rev.C
©2008 Fairchild Semiconductor Corporation
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
DSS
GSS
∆V
d(on)
r
d(off)
f
DS(on)
FS
GS(th)
∆T
∆T
iss
oss
rss
g
Symbol
g(TOT)
gs
gd
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Parameter
T
J
= 25 °C unless otherwise noted
I
I
I
I
V
V
V
V
V
I
I
V
V
V
V
V
V
V
V
Q1
V
Q2
V
Q1
V
V
Q2
V
V
Q1
V
Q2
V
D
D
D
D
D
D
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DD
DD
DS
DS
DD
GS
DD
GS
GS
GS
= 250 µA, V
= -250 µA, V
= 250 µA, referenced to 25 °C
= -250 µA, referenced to 25 °C
= 250 µA, referenced to 25 °C
= -250 µA, referenced to 25 °C
= 32 V, V
= -32 V, V
= 20 V, V
= -20 V, V
= ±20 V, V
= V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= -10 V, I
= -4.5 V, I
= -10 V, I
= 5 V, I
= -5 V, I
= 20 V, I
= 10 V, R
= -20 V, I
= -10 V, R
= 10 V, V
= -10 V, V
DS
DS
Test Conditions
, I
, I
2
D
D
D
D
D
D
D
GS
D
DD
D
GEN
D
GS
D
= 6.1 A
GS
DD
GEN
= 6.1 A,
D
= -5.2 A
GS
GS
= 250 µA
= -250 µA
GS
DS
= 6.1 A
= 6.1 A, T
= -5.2 A,
= -5.2 A, T
= 5.6 A
= -5.2 A
= 0 V, f = 1 MHZ
= -4.1 A
= 20 V, I
= 0 V
= 0 V, f = 1 MHZ
= -20 V, I
= 0 V
= 0 V
= 0 V
= 0 V
= 6 Ω
= 6 Ω
J
D
J
= 125 °C
D
= 6.1 A
= 125 °C
= -5.2 A
Type
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Min
-1.5
-40
1.5
40
Typ
-2.0
795
765
135
-32
2.0
1.7
3.6
2.5
2.6
2.9
3.2
37
20
24
30
28
45
41
24
14
95
65
80
17
17
15
15
-6
6
8
2
3
2
3
6
www.fairchildsemi.com
±100
±100
1055
1015
Max
-3.0
130
180
100
120
3.0
26
31
39
39
65
57
12
15
10
10
30
30
10
10
21
20
-1
1
mV/°C
mV/°C
Units
mΩ
µA
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S

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