FDS4897AC Fairchild Semiconductor, FDS4897AC Datasheet - Page 5

• Manufacturer Part Number: FDS4897AC
• Description: MOSFET N/P-CH 40V 6.1/5.2A SO8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4897AC

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 6.1A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6.1A, 5.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 1055pF @ 20V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.026 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.1 A @ N Channel or 5.2 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4897ACTR

FDS4897AC Rev.C
©2008 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
0.01
10
10
0.1
30
10
9
8
7
6
5
4
3
2
1
Figure 7.
0.01
8
6
4
2
0
1
0.01
0
I
D
Figure 9.
= 6.1 A
Figure 11. Forward Bias Safe
THIS AREA IS
LIMITED BY r
Switching Capability
V
Gate Charge Characteristics
DS
V
t
0.1
AV
DD
4
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
Unclamped Inductive
, TIME IN AVALANCHE (ms)
0.1
Q
= 20 V
g
SINGLE PULSE
T
R
T
, GATE CHARGE (nC)
J
A
θ
DS(on)
JA
T
= MAX RATED
= 25
J
= 135
= 125
V
DD
o
C
1
= 15 V
8
o
o
C/W
C
1
V
DD
10
= 25 V
12
T
J
= 25
100 us
100 ms
o
1 ms
10 ms
10 20
1 s
10 s
C
DC
100
16
200
T
J
5
= 25 °C unless otherwise noted
1000
2000
1000
100
0.5
7
6
5
4
3
2
1
0
100
10
25
Figure 10.
10
1
10
0.1
Figure 12.
R
-4
Current vs Ambient Temperature
θ
V
f = 1 MHz
V
Figure 8.
JA
GS
GS
= 78
10
= 10 V
= 0 V
50
-3
T
V
o
C/W
C
DS
Maximum Continuous Drain
Power Dissipation
,
to Source Voltage
AMBIENT TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
10
t, PULSE WIDTH (sec)
Single Pulse Maximum
Capacitance vs Drain
V
-2
GS
75
= 4.5 V
1
10
-1
100
1
V
GS
= 10 V
SINGLE PULSE
R
T
10
A
θ
JA
o
= 25
C )
125
10
= 135
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o
C
100
C
C
C
o
oss
rss
C/W
iss
150
1000
40