FDS4897AC Fairchild Semiconductor, FDS4897AC Datasheet - Page 6

• Manufacturer Part Number: FDS4897AC
• Description: MOSFET N/P-CH 40V 6.1/5.2A SO8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4897AC

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 6.1A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6.1A, 5.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 1055pF @ 20V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.026 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.1 A @ N Channel or 5.2 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4897ACTR

FDS4897AC Rev.C
©2008 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
0.001
0.01
0.1
1
2
10
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 13.
10
-3
SINGLE PULSE
R
(
Junction-to-Ambient Transient Thermal Response Curve
Note 1b
θ
JA
= 135
10
)
-2
o
C/W
t, RECTANGULAR PULSE DURATION (sec)
10
-1
T
J
6
= 25 °C unless otherwise noted
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
= P
DM
x Z
P
θJA
DM
1
/t
x R
2
100
θJA
t
1
+ T
t
2
A
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