FDS4897AC Fairchild Semiconductor, FDS4897AC Datasheet - Page 4

• Manufacturer Part Number: FDS4897AC
• Description: MOSFET N/P-CH 40V 6.1/5.2A SO8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4897AC

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 6.1A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6.1A, 5.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 1055pF @ 20V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.026 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.1 A @ N Channel or 5.2 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4897ACTR

FDS4897AC Rev.C
©2008 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
24
20
16
12
24
20
16
12
8
4
0
Figure 3. Normalized On Resistance
8
4
0
-75
0.0
Figure 1.
1
Figure 5. Transfer Characteristics
I
V
D
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
DS
= 6.1 A
-50
= 10 V
= 5 V
vs Junction Temperature
T
V
V
-25
J
GS
DS
,
On Region Characteristics
0.5
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
,
DRAIN TO SOURCE VOLTAGE (V)
V
GS
2
0
T
= 4 V
J
= 25
V
T
25
GS
J
µ
= 150
s
= 4.5 V
1.0
o
C
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
V
o
GS
C
= 10 V
75
3
1.5
o
100 125 150
C )
T
J
V
= -55
GS
V
GS
= 3.5 V
= 3 V
o
C
µ
s
2.0
4
T
J
4
= 25 °C unless otherwise noted
0.001
0.01
0.5
0.1
40
10
80
70
60
50
40
30
20
10
5
4
3
2
1
1
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
2
0
vs Drain Current and Gate Voltage
Figure 6.
V
GS
= 0 V
V
0.2
SD
4
V
V
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
T
GS
GS
On-Resistance vs Gate to
J
I
,
Source Voltage
= 150
D
4
Source to Drain Diode
= 3 V
GATE TO SOURCE VOLTAGE (V)
,
DRAIN CURRENT (A)
0.4
8
o
C
T
J
= 25
0.6
12
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
I
D
C
= 6.1 A
V
T
GS
J
= 125
0.8
= 4 V
16
T
J
= -55
V
8
o
C
GS
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T
V
V
J
1.0
o
= 3.5 V
GS
20
GS
= 25
C
= 4.5 V
= 10 V
o
µ
µ
C
s
s
1.2
10
24