NANDO1GW3B2CN6 NUMONYX, NANDO1GW3B2CN6 Datasheet - Page 58

• Manufacturer Part Number: NANDO1GW3B2CN6
• Description: IC, FLASH, 1GB, 25µS, TSOP-48
• Manufacturer: NUMONYX

Specifications of NANDO1GW3B2CN6

• Memory Type: FLASH
• Memory Size: 1GB
• Access Time: 25µS
• Supply Voltage Range: 2.7V TO 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C TO +85°C
• Voltage, Vcc: 3.3V
• Memory Configuration: 128M X 8
• Rohs Compliant: Yes

Ordering information
13
Note:
58/60
Ordering information
Table 29.
1. x16 organization only available for MCP products.
2. For NAND02G-B2C devices only.
3. For NAND01G-B2B devices only.
Devices are shipped from the factory with the memory content bits, in valid blocks, erased to
’1’. For further information on any aspect of this device, please contact your nearest
Numonyx sales office.
Example:
Device type
NAND flash memory
Density
01G = 1 Gbit
02G = 2 Gbits
Operating voltage
R = V
W = V
Bus width
3 = x8
4 = x16
Family identifier
B = 2112-byte/ 1056-word page
Device options
2 = chip enable don't care enabled
Product version
B = second version (1-Gbit devices)
C = third version (2-Gbit devices)
Package
N = TSOP48 12 x 20 mm
ZA = VFBGA63 9.5 x 12 x 1 mm, 0.8 mm pitch
ZA= VFBGA63 9 x 11 x 1 mm, 0.8 mm pitch
Temperature range
1 = 0 to 70 °C
6 = –40 to 85 °C
Option
E = ECOPACK® package, standard packing
F = ECOPACK® package, tape & reel packing
DD
DD
(1)
= 1.7 to 1.95 V
= 2.7 to 3.6 V
Ordering information scheme
(3)
(2)
NAND02GR3B2C ZA 6
NAND01G-B2B, NAND02G-B2C
E