NANDO1GW3B2CN6 NUMONYX, NANDO1GW3B2CN6 Datasheet - Page 57

• Manufacturer Part Number: NANDO1GW3B2CN6
• Description: IC, FLASH, 1GB, 25µS, TSOP-48
• Manufacturer: NUMONYX

Specifications of NANDO1GW3B2CN6

• Memory Type: FLASH
• Memory Size: 1GB
• Access Time: 25µS
• Supply Voltage Range: 2.7V TO 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C TO +85°C
• Voltage, Vcc: 3.3V
• Memory Configuration: 128M X 8
• Rohs Compliant: Yes

NAND01G-B2B, NAND02G-B2C
Figure 37. VFBGA63 9 x 11 mm - 6 x 8 active ball array, 0.80 mm pitch, package outline
1. Drawing is not to scale
Table 28.
Symbol
FD1
FE1
ddd
SD
D1
D2
FD
FE
SE
A1
A2
E1
E2
A
D
E
b
e
VFBGA63 9 x 11 mm - 6 x 8 active ball array, 0.80 mm pitch, package mechanical data
E
E2
11.00
0.45
9.00
4.00
7.20
5.60
8.80
0.80
2.50
0.90
2.70
1.10
0.40
0.40
Typ
BALL "A1"
FD1
E1
A
millimeters
e
10.90
0.25
0.40
8.90
Min
–
–
–
SD
D2
D1
D
FD
11.10
Max
1.05
0.70
0.50
9.10
0.10
A1
–
–
–
e
SE
b
FE1
A2
FE
0.018
0.354
0.157
0.283
0.433
0.220
0.346
0.031
0.098
0.035
0.106
0.043
0.016
0.016
Typ
BGA-Z75
inches
0.010
0.016
0.350
0.429
ddd
Package mechanical
Min
–
–
–
0.041
0.028
0.020
0.358
0.004
0.437
Max
–
–
–
57/60