NANDO1GW3B2CN6 NUMONYX, NANDO1GW3B2CN6 Datasheet - Page 51

• Manufacturer Part Number: NANDO1GW3B2CN6
• Description: IC, FLASH, 1GB, 25µS, TSOP-48
• Manufacturer: NUMONYX

Specifications of NANDO1GW3B2CN6

• Memory Type: FLASH
• Memory Size: 1GB
• Access Time: 25µS
• Supply Voltage Range: 2.7V TO 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C TO +85°C
• Voltage, Vcc: 3.3V
• Memory Configuration: 128M X 8
• Rohs Compliant: Yes

NAND01G-B2B, NAND02G-B2C
Figure 27. Block erase AC waveforms
1. Address cycle 3 is required for 2-Gbit devices only.
Figure 28. Reset AC waveforms
RB
I/O
AL
CL
W
R
I/O
RB
R
CL
AL
W
E
Setup Command
Block Erase
60h
FFh
(Write Cycle time)
cycle 1
tWLWL
Add.
Block Address Input
cycle 2
Add.
cycle 3
Add.
tWHBL
(Reset Busy time)
tBLBH4
Confirm
D0h
Code
Block Erase
(Erase Busy time)
tBLBH3
70h
Read Status Register
DC and AC parameters
SR0
ai08043
ai08038b
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