NANDO1GW3B2CN6 NUMONYX, NANDO1GW3B2CN6 Datasheet - Page 40

• Manufacturer Part Number: NANDO1GW3B2CN6
• Description: IC, FLASH, 1GB, 25µS, TSOP-48
• Manufacturer: NUMONYX

Specifications of NANDO1GW3B2CN6

• Memory Type: FLASH
• Memory Size: 1GB
• Access Time: 25µS
• Supply Voltage Range: 2.7V TO 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C TO +85°C
• Voltage, Vcc: 3.3V
• Memory Configuration: 128M X 8
• Rohs Compliant: Yes

Maximum ratings
10
40/60
Maximum ratings
Stressing the device above the ratings listed in
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 19.
1. Minimum voltage may undershoot to –2 V for less than 20 ns during transitions on input and I/O pins.
Maximum voltage may overshoot to V
Symbol
T
V
T
V
BIAS
IO
STG
DD
(1)
Absolute maximum ratings
Temperature under bias
Storage temperature
Input or output voltage
Supply voltage
Parameter
DD
+ 2 V for less than 20 ns during transitions on I/O pins.
1.8 V devices
1.8 V devices
3 V devices
3 V devices
Table 19: Absolute maximum
NAND01G-B2B, NAND02G-B2C
– 0.6
– 0.6
– 0.6
– 0.6
– 50
– 65
Min
Value
Max
125
150
2.7
4.6
2.7
4.6
ratings, may
Unit
°C
°C
V
V
V
V