NANDO1GW3B2CN6 NUMONYX, NANDO1GW3B2CN6 Datasheet - Page 56

• Manufacturer Part Number: NANDO1GW3B2CN6
• Description: IC, FLASH, 1GB, 25µS, TSOP-48
• Manufacturer: NUMONYX

Specifications of NANDO1GW3B2CN6

• Memory Type: FLASH
• Memory Size: 1GB
• Access Time: 25µS
• Supply Voltage Range: 2.7V TO 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C TO +85°C
• Voltage, Vcc: 3.3V
• Memory Configuration: 128M X 8
• Rohs Compliant: Yes

Package mechanical
Figure 36. VFBGA63 9.5 x 12 mm - 6 x 8 active ball array, 0.80 mm pitch, package outline
1. Drawing is not to scale
Table 27.
56/60
Symbol
FD1
FE1
ddd
FD
SD
SE
A1
A2
D1
D2
E1
E2
FE
A
D
E
b
e
VFBGA63 9.5 x 12 mm - 6 x 8 ball array, 0.80 mm pitch, package mechanical data
12.00
1.60
0.45
9.50
4.00
7.20
5.60
8.80
0.80
2.75
1.15
3.20
0.40
0.40
Typ
E
E2
E1
millimeters
BALL "A1"
FD1
FD
e
11.90
A
0.25
0.40
9.40
Min
–
e
D2
D1
SD
D
12.10
Max
1.05
0.70
0.50
9.60
0.10
–
b
FE1
A1
e
SE
A2
0.018
0.374
0.157
0.283
0.472
0.220
0.346
0.031
0.108
0.045
0.126
0.063
0.016
0.016
FE
Typ
NAND01G-B2B, NAND02G-B2C
BGA-Z67
ddd
inches
0.010
0.016
0.370
0.468
Min
–
0.041
0.028
0.020
0.378
0.004
0.476
Max
–