NANDO1GW3B2CN6 NUMONYX, NANDO1GW3B2CN6 Datasheet - Page 46

• Manufacturer Part Number: NANDO1GW3B2CN6
• Description: IC, FLASH, 1GB, 25µS, TSOP-48
• Manufacturer: NUMONYX

Specifications of NANDO1GW3B2CN6

• Memory Type: FLASH
• Memory Size: 1GB
• Access Time: 25µS
• Supply Voltage Range: 2.7V TO 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C TO +85°C
• Voltage, Vcc: 3.3V
• Memory Configuration: 128M X 8
• Rohs Compliant: Yes

DC and AC parameters
Figure 19. Command latch AC waveforms
Figure 20. Address latch AC waveforms
1. A fifth address cycle is required for 2-Gbit devices only.
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CL
I/O
AL
W
E
I/O
CL
AL
W
E
tELWH
(E Setup time)
(AL Setup time)
tALHWH
(Data Setup time)
tWLWH
tDVWH
(ALSetup time)
H(E Setup time)
(AL Hold time)
tWHALL
(CL Setup time)
tALLWH
tELWH
tCLHWH
tWHWL
Adrress
cycle 1
tWLWL
(Data Setup time)
(CL Setup time)
tWLWH
tCLLWH
tDVWH
(Data Hold time)
tDVWH
tWHDX
tWHALL
tWHWL
Adrress
cycle 2
tWLWL
Command
tWLWH
tDVWH
tWLWH
tWHDX
tWHALL
tWHWL
Adrress
cycle 3
tWHDX
(Data Hold time)
tWLWL
(E Hold time)
tWHEH
(CL Hold time)
tWHCLL
(AL Hold time)
tWHALH
tWLWH
tDVWH
tWHDX
NAND01G-B2B, NAND02G-B2C
tWHALL
tWHWL
Adrress
cycle 4
tWLWL
tWLWH
tDVWH
tWHDX
Adrress
cycle 5
ai13106
ai13105
tWHDX