NANDO1GW3B2CN6 NUMONYX, NANDO1GW3B2CN6 Datasheet - Page 36

• Manufacturer Part Number: NANDO1GW3B2CN6
• Description: IC, FLASH, 1GB, 25µS, TSOP-48
• Manufacturer: NUMONYX

Specifications of NANDO1GW3B2CN6

• Memory Type: FLASH
• Memory Size: 1GB
• Access Time: 25µS
• Supply Voltage Range: 2.7V TO 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C TO +85°C
• Voltage, Vcc: 3.3V
• Memory Configuration: 128M X 8
• Rohs Compliant: Yes

Software algorithms
36/60
Table 17.
Figure 15. Bad block management flowchart
Figure 16. Garbage collection
Operation
Invalid
Program
Valid
NAND flash failure modes
page
page
Erase
Read
Old area
Block Address =
START
Block 0
= FFh?
block?
Data
Last
END
YES
YES
NO
NO
(erased)
Free
page
Bad Block table
Block replacement or ECC
Update
Block Address
Increment
Block replacement
New area (after GC)
Procedure
NAND01G-B2B, NAND02G-B2C
ECC
AI07588C
AI07599B