PIC18F6680-I/L Microchip Technology, PIC18F6680-I/L Datasheet - Page 427

Microcontrollers (MCU) 64KB 3328 RAM 52 I/O

PIC18F6680-I/L

Manufacturer Part Number
PIC18F6680-I/L
Description
Microcontrollers (MCU) 64KB 3328 RAM 52 I/O
Manufacturer
Microchip Technology
Datasheet

Specifications of PIC18F6680-I/L

Processor Series
PIC18F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
3.25 KB
Interface Type
I2C/SPI/AUSART/CAN
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
53
Number Of Timers
5
Operating Supply Voltage
4.2 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, ICE4000, DV164136
Minimum Operating Temperature
- 40 C
On-chip Adc
12-ch x 10-bit
Program Memory Type
Flash
Program Memory Size
64 KB
Package / Case
PLCC-68
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PIC18F6680-I/L
Manufacturer:
RUBYCON
Quantity:
46 000
Part Number:
PIC18F6680-I/L
Manufacturer:
MICROCH
Quantity:
20 000
TABLE 27-4:
 2004 Microchip Technology Inc.
DC Characteristics
D110
D112
D113
D120
D120A E
D121
D122
D123
D123A T
D130
D130A E
D131
D132
D132A V
D132B V
D133
D133A T
D133A T
D134
D134A T
Note 1:
Param
No.
2:
3:
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
V
I
I
E
V
T
T
E
V
V
T
T
PP
DDP
Sym
RETD
RETD
IE
IW
IW
RETD
RETD
DEW
PP
D
D
DRW
P
P
PR
IE
IW
PEW
only and are not tested.
These specifications are for programming the on-chip program memory through the use of table write
instructions.
The pin may be kept in this range at times other than programming but it is not recommended.
Retention time is valid provided no other specifications are violated.
Internal Program Memory
Programming Specifications
(Note 1)
Voltage on MCLR/V
Current into MCLR/V
Supply Current during
Programming
Data EEPROM Memory
Cell Endurance
Cell Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Characteristic Retention
Program Flash Memory
Cell Endurance
Cell Endurance
V
V
V
or Write
V
ICSP Block Erase Cycle Time
ICSP Erase or Write Cycle Time
(externally timed)
Self-timed Write Cycle Time
Characteristic Retention
Characteristic Retention
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
DD
DD
for Read/Write
for Read
for Block Erase
for Externally Timed Erase
for Self-timed Write
Characteristic
PP
PP
pin
pin
PIC18F6585/8585/6680/8680
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C
100K
V
1000
V
V
9.00
Min
10K
10K
100
100
4.5
4.5
40
40
MIN
MIN
MIN
1
Typ†
100K
100K
10K
1M
2.5
4
5
13.25
Max
5.5
5.5
5.5
5.5
5.5
10
5
-40°C
Units
Year -40 C to +85 C (Note 3)
Year 25 C (Note 3)
Year -40 C to +85 C (Note 3)
Year 25 C (Note 3)
E/W -40 C to +85 C
E/W +85 C to +125 C
E/W -40 C to +85 C
E/W +85 C to +125 C
mA
ms
ms
ms
ms
V
V
V
V
V
V
A
T
T
A
A
(Note 2)
Using EECON to read/write,
V
voltage
V
voltage
Using ICSP port
Using ICSP port
V
voltage
V
V
+85°C for industrial
MIN
MIN
MIN
DD
DD
+125°C for extended
> 4.5V
> 4.5V
= Minimum operating
= Minimum operating
= Minimum operating
Conditions
DS30491C-page 425

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