UPD70F3785GJ-GAE-AX Renesas Electronics America, UPD70F3785GJ-GAE-AX Datasheet - Page 1660

• Manufacturer Part Number: UPD70F3785GJ-GAE-AX
• Description: MCU 32BIT V850ES/JX3-E 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: V850ES/Jx3-Er

Specifications of UPD70F3785GJ-GAE-AX

• Core Processor: RISC
• Core Size: 32-Bit
• Speed: 50MHz
• Connectivity: CSI, EBI/EMI, Ethernet, I²C, UART/USART, USB
• Peripherals: DMA, LVD, PWM, WDT
• Number Of I /o: 100
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 124K x 8
• Voltage - Supply (vcc/vdd): 2.85 V ~ 3.6 V
• Data Converters: A/D 12x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

33.3 Functional Overview
of the dedicated flash programmer, regardless of whether the V850ES/JH3-E and V850ES/JJ3-E have already been
mounted on the target system or not (off-board/on-board programming).
supported, so that the program cannot be changed by an unauthorized person.
the program is changed after production/shipment of the target system. A boot swap function that rewrites the entire
flash memory area safely is also supported. In addition, interrupt servicing is supported during self programming, so
that the flash memory can be rewritten under various conditions, such as while communicating with an external device.
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On-board programming
Off-board programming
Self programming
The internal flash memory of the V850ES/JH3-E and V850ES/JJ3-E can be rewritten by using the rewrite function
In addition, a security function that prohibits rewriting the user program written to the internal flash memory is also
The rewrite function using the user program (self programming) is ideal for an application where it is assumed that
Remark
Rewrite Method
The FA series is a product of Naito Densei Machida Mfg. Co., Ltd.
Flash memory can be rewritten after the device is mounted on the
target system, by using a dedicated flash programmer.
Flash memory can be rewritten before the device is mounted on the
target system, by using a dedicated flash programmer and a dedicated
program adapter board (FA series).
Flash memory can be rewritten by executing a user program that has
been written to the flash memory in advance by means of off-board/on-
board programming. (During self-programming, instructions cannot be
fetched from or data access cannot be made to the internal flash
memory area. Therefore, the rewrite program must be transferred to
the internal RAM or external memory in advance).
CHAPTER 33 FLASH MEMORY
Table 33-1. Rewrite Method
User’s Manual U19601EJ2V0UD
Functional Overview
Flash memory
programming mode
Normal operation mode
Operation Mode