DF2166VTE33 Renesas Electronics America, DF2166VTE33 Datasheet - Page 731
DF2166VTE33
Manufacturer Part Number
DF2166VTE33
Description
MCU FLASH 3V 512K 33MHZ 144TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet
1.HS2168EPI61H-U.pdf
(876 pages)
Specifications of DF2166VTE33
Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, LPC, SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
106
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
40K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-TQFP, 144-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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• ERROR: (1 byte): Error code
(10) Erasure
Erasure is performed with the erasure selection and block erasure command.
Firstly, erasure is selected by the erasure selection command and the boot program then erases the
specified block. The command should be repeatedly executed if two or more blocks are to be
erased. Sending a block-erasure command from the host with the block number H'FF will stop the
erasure operating. On completion of erasing, the boot program will wait for selection of
programming or erasing.
The sequences of issuing the erasure selection command and block-erasure command are shown in
figure 20.24.
Repeat
H'11: Checksum error
H'2A: Address error
H'53: Programming error
An error has occurred in programming and programming cannot be continued.
Host
Figure 20.24 Erasure Sequence
Preparation for erasure (H'48)
Erasure (Erasure block number)
Erasure (H'FF)
ACK
ACK
ACK
Rev. 3.00, 03/04, page 689 of 830
Transfer of erasure
Boot program
Erasure
program
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